data sheet buy 10 cs12j - 01 ifag p mm rpd d hir 1 of 4 v 2 a , april 201 2 hirel radhard power - mos ? low r ds(on) ? single event effect (see) hardened let 55, range: 90m v gs = - 20 v, v d s = 10 0v, approved ? total ionisation dose (tid) hardened 1 0 0 krad approved (level r) ? he rmetically sealed ? n - channel ? space qualified e scc detail spec. no.: 5 205 /0 28 type marking pin configuration 1 2 3 - package b uy 10 cs 12 j - 01 - d g s - smd05 maximum ratings parameter symbol values unit drain source voltage v ds 10 0 v gate source voltage v gs +/ - 20 v drain gate voltage v dg 10 0 v continuous d rai n c urrent t c = 25 c t c = 100 c i d 12 .4 8 a continuous source current i s 12 .4 a d rain c urrent pulsed , t p limited by t jmax i dm 50 apk total power dissipation 1) p tot 75 w operating and storage temperature t op - 55 to + 150 c avalanche energy e as 60 mj thermal characteristics thermal resistance (junction to case) r th jc 1 . 66 k/ w soldering temperature t sol 25 0 c notes.: 1) for t s 25c. for t s > 25c derating is required . 2 3 1 2 3 1
data sheet buy 10 cs12j - 01 ifag p mm rpd d hir 2 of 4 v 2 a , april 201 2 electrical characteristics , at t a =25c; unless otherwise specified parameter symbol values unit min. max. dc characteristics breakdown voltage drain to source i d = 0.25ma, v gs = 0v b vdss 10 0 - v gate threshold voltage i d = 1.0ma, v ds v gs v gs(th) 2.0 4.0 v gate to source leakage current v ds = 0v, v g s = +/ - 20v i gss - +/ - 100 na drain current v ds = 8 0v, v g s = 0v i d ss - 25 a drain source on resistance 1) v gs = 10v, i d = 8a r ds(on) - 0.1 3 source drain diode, forward voltage 1) , 2) v gs = 0 v, i s = 12 .4 a v sd - 1 . 2 v ac characteristics turn - on delay time v dd = 5 0 % v d s , i d = 8 a, r g = 4.7 t d(on) - 25 n s rise time v dd = 5 0 % v d s , i d = 8 a, r g = 4.7 t r - 35 n s turn - off delay time v dd = 5 0 % v d s , i d = 8 a, r g = 4.7 t d(off) - 35 n s fall time v dd = 5 0 % v d s , i d = 8 a, r g = 4.7 t f - 20 n s reverse recovery time v dd < 5 0 % v d s , i d = 12.4 a t rr - - ns common source input capacitance v ds = 100 v, v gs = 0v, f = 1.0mhz c iss 1300 1900 pf common source out put capacitance v ds = 100 v, v gs = 0v, f = 1.0mhz c o ss 90 150 pf common source reverse transfer capacitance v ds = 100 v, v gs = 0v, f = 1.0mhz c r ss 1 6 pf total gate charge v dd = 5 0 % v d s , v gs = 10v , i d = 12. 4 a q g - - nc notes.: 1) pulsed measurement: pulse width < 300s, duty cycle < 2.0% . 2) measured within 2.0 mm of case.
data sheet buy 10 cs12j - 01 ifag p mm rpd d hir 3 of 4 v 2 a , april 201 2 electrical characteristics at t a = 1 2 5c; unless otherwise specified parameter symbol values unit min. max. dc characteristics gate threshold voltage i d = 1.0ma, v ds gs v gs(th) 1.5 - v gate to source leakage current v ds = 0v, v g s = +/ - 20v i gss - +/ - 2 00 na drain current v ds = 8 0v, v g s = 0v i d ss - 250 a drain source on resistance 1) v gs = 10v, i d = 8a r ds(on) - 0. 3 notes.: 1) pulsed measurement: pulse width < 300s, duty cycle <2.0% . electrical characteristics at t a = - 5 5 c; unless otherwise specified parameter symbol values unit min. max. dc characteristics gate threshold voltage i d = 1.0ma, v ds gs v gs(th) - 5.0 v
data sheet buy 10 cs12j - 01 ifag p mm rpd d hir 4 of 4 v 2 a , april 201 2 smd0 5 package attention please! the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (beschaffenheitsgarantie). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby discla ims any and all warranties and liabilities of any kind, including without limitation warranties of non - infringement of intellectual property rights of a third party. information for further information on technology, delivery terms and conditions and pric es please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please conta ct your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express ed written approval of infineon technologies, if a failure of such components can reasonably be expected to c ause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or prot ect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. edition 20 1 2 - 0 4 published by infineon technologie s ag 85579 neubiberg , germany ? infineon technologies ag 201 2 all rights reserved. dimensions are typical [mm] 7 . 5 2 2 . 4 1 1 . 4 3 5 . 7 2 7 . 2 6 1 . 1 3 3 . 0 5 0 . 6 3 3 . 2 0 1 0 . 1 6
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